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fal: add new example for norflash
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‎components/fal/samples/porting/fal_norflash_port.c

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#include <fal.h>
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#include "fal_def.h"
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#define FLASH_SECTOR_SIZE ( 4 * 1024 )
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#define FLASH_START_ADDR 0U
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#define FLASH_END_ADDR 0x01000000U // 16*1024*1024
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#define FLASH_PROGRAM_MIN_SIZE 256 // 256 bytes
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//每次对falsh写入时 底层可以写入的最大字节数为 FALSH_PAGE_SIZE
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#define FALSH_PAGE_SIZE FLASH_PROGRAM_MIN_SIZE // 256 bytes
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/**
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* @brief 需要实现以下函数
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*/
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extern int norflash_init( void );
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extern void norflash_read( uint8_t* pbuf, uint32_t addr, uint16_t datalen );
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extern void norflash_write_page( uint8_t* pbuf, uint32_t addr, uint16_t datalen );
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extern void norflash_erase_sector( uint32_t saddr );
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static int init( void );
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static int read( long offset, uint8_t* buf, size_t size );
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static int write( long offset, const uint8_t* buf, size_t size );
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static int erase( long offset, size_t size );
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#define FAL_ALIGN_UP( size, align ) \
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( ( ( size ) + ( align ) - 1 ) - ( ( ( size ) + ( align ) - 1 ) % ( align ) ) )
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#define FAL_ALIGN_DOWN( size, align ) ( ( ( size ) / ( align ) ) * ( align ) )
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static int32_t get_sector( uint32_t address )
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{
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uint32_t sector = 0;
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if ( address < FLASH_END_ADDR && address >= FLASH_START_ADDR ) {
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address -= FLASH_START_ADDR;
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sector = address / FLASH_SECTOR_SIZE;
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return sector;
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}
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return -1;
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}
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static int init( void )
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{
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norflash_init();
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return 0;
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}
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static int read( long offset, uint8_t* buf, size_t size )
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{
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norflash_read( buf, offset + FLASH_START_ADDR, size );
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return size;
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}
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static uint32_t judge_whether_erase( uint8_t* sector_buf, uint16_t len )
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{
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uint8_t* p = sector_buf;
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for ( size_t i = 0; i < len; i++ ) {
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if ( p[ i ] != 0xFF ) {
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return 1;
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}
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}
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return 0;
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}
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/**
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* @brief
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*
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* @param offset 绝对地址
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* @param buf 读出来的扇区数据缓存
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* @param size 从扇区开始要写的长度 小于扇区大小
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* @return int
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*/
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static int write_sector( long offset, const uint8_t* buf, size_t size )
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{
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uint32_t addr = FLASH_START_ADDR + offset;
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uint32_t addr_up = FAL_ALIGN_UP( addr, FALSH_PAGE_SIZE );
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uint32_t addr_down = FAL_ALIGN_DOWN( addr, FALSH_PAGE_SIZE );
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uint32_t addr_end = addr + size;
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uint32_t addr_end_up = FAL_ALIGN_UP( addr_end, FALSH_PAGE_SIZE );
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uint32_t addr_end_down = FAL_ALIGN_DOWN( addr_end, FALSH_PAGE_SIZE );
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uint32_t cur_addr = addr_down;
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uint32_t max_write_len = 0;
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uint32_t write_len = 0;
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while ( cur_addr < addr_end_up ) {
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if ( cur_addr < addr ) {
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max_write_len = ( addr_up - addr );
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write_len = size >= max_write_len ? max_write_len : size;
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norflash_write_page( buf, addr, write_len );
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buf += write_len;
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}
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else if ( cur_addr == addr_end_down ) {
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max_write_len = FALSH_PAGE_SIZE;
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write_len = addr_end - cur_addr;
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write_len = write_len >= max_write_len ? max_write_len : write_len;
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norflash_write_page( buf, cur_addr, write_len );
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}
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else {
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norflash_write_page( buf, cur_addr, FALSH_PAGE_SIZE );
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buf += FALSH_PAGE_SIZE;
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}
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cur_addr += FALSH_PAGE_SIZE;
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}
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return size;
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}
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static int write( long offset, const uint8_t* buf, size_t size )
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{
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uint32_t addr = FLASH_START_ADDR + offset;
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uint32_t addr_up = FAL_ALIGN_UP( addr, FLASH_SECTOR_SIZE );
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uint32_t addr_down = FAL_ALIGN_DOWN( addr, FLASH_SECTOR_SIZE );
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uint32_t addr_end = addr + size;
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uint32_t addr_end_up = FAL_ALIGN_UP( addr_end, FLASH_SECTOR_SIZE );
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uint32_t addr_end_down = FAL_ALIGN_DOWN( addr_end, FLASH_SECTOR_SIZE );
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uint32_t cur_addr = addr_down;
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uint32_t max_write_len = 0;
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uint32_t write_len = 0;
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if ( addr_end_up > FLASH_END_ADDR || ( int )addr_end_down < FLASH_START_ADDR ) return -1;
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//如果不使用内存分配可以定义一个static FLASH_SECTOR_SIZE 长度的buf
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uint8_t* read_sector_buf = FAL_MALLOC( FLASH_SECTOR_SIZE );
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if ( read_sector_buf == RT_NULL ) {
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return -2;
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}
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while ( cur_addr < addr_end_up ) {
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// 首次扇区写
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if ( cur_addr < addr ) {
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read( cur_addr - FLASH_START_ADDR, read_sector_buf, FLASH_SECTOR_SIZE );
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max_write_len = ( addr_up - addr );
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write_len = size >= max_write_len ? max_write_len : size;
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if ( judge_whether_erase( read_sector_buf + addr - cur_addr, write_len ) ){
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norflash_erase_sector( get_sector( cur_addr ) );
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FAL_MEMCPY( read_sector_buf + ( addr - cur_addr ), buf, write_len );
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write_sector( cur_addr, read_sector_buf, FLASH_SECTOR_SIZE );
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}
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else {
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write_sector( addr, buf, write_len );
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}
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buf += write_len;
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}
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//最后一次扇区写
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else if ( cur_addr == addr_end_down ) {
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read( cur_addr - FLASH_START_ADDR, read_sector_buf, FLASH_SECTOR_SIZE );
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max_write_len = FLASH_SECTOR_SIZE;
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write_len = addr_end - cur_addr;
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write_len = write_len >= max_write_len ? max_write_len : write_len;
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if ( judge_whether_erase( read_sector_buf, write_len ) ) {
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FAL_MEMCPY( read_sector_buf, buf, write_len );
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norflash_erase_sector( get_sector( cur_addr ) );
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write_sector( cur_addr, read_sector_buf, FLASH_SECTOR_SIZE );
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}
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else {
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write_sector( cur_addr, buf, write_len );
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}
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}
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//中间扇区写 直接擦除
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else {
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norflash_erase_sector( get_sector( cur_addr ) );
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write_sector( cur_addr, buf, FLASH_SECTOR_SIZE );
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buf += FLASH_SECTOR_SIZE;
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}
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cur_addr += FLASH_SECTOR_SIZE;
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}
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FAL_FREE( read_sector_buf );
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return size;
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}
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static int erase( long offset, size_t size )
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{
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int32_t cur_erase_sector;
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uint32_t addr = FLASH_START_ADDR + offset;
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uint32_t addr_down = FAL_ALIGN_DOWN( addr, FLASH_SECTOR_SIZE );
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uint32_t addr_end = addr + size;
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uint32_t addr_end_up = FAL_ALIGN_UP( addr_end, FLASH_SECTOR_SIZE );
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uint32_t cur_addr = addr_down;
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while ( cur_addr < addr_end_up ) {
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cur_erase_sector = get_sector( cur_addr );
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if ( cur_erase_sector == -1 ) {
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return cur_addr - addr;
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}
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norflash_erase_sector( cur_erase_sector );
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cur_addr += FLASH_SECTOR_SIZE;
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}
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return size;
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}
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const struct fal_flash_dev norflash0 = {
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.name = "norflash0",
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.addr = FLASH_START_ADDR,
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.len = FLASH_END_ADDR - FLASH_START_ADDR,
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.blk_size = FLASH_SECTOR_SIZE,
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.ops = { init, read, write, erase },
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.write_gran = 1,
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};

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