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ChrisRackauckasChrisRackauckas
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Merge pull request #353 from jClugstor/add_NPN
Add NPN and PNP BJT transistor models
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‎docs/src/API/electrical.md‎

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@@ -34,6 +34,8 @@ IdealOpAmp
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Diode
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HeatingDiode
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VariableResistor
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PNP
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NPN
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```
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## Analog Sensors

‎src/Electrical/Analog/transistors.jl‎

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"""
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NPN(;name, B_F, B_R, Is, V_T, V_A, phi_C, phi_E, Z_C, Z_E, Tau_f, Tau_r, C_jC0, C_jE0, C_CS, gamma_C, gamma_E, NF, NR)
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Creates an NPN Bipolar Junction Transistor following a modified Ebers-Moll model. Includes an optional substrate pin and optional
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Early voltage effect.
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# Structural Parameters
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- `use_substrate`: If `true`, a substrate pin connector is available. If `false` it is
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assumed the substrate is connected to the collector pin.
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- `use_Early`: If `true`, the Early effect is modeled, which takes in to account the effect
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collector-base voltage variations have on the collector-base depletion region. In many cases this
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effectively means that the collector current has a dependency on the collector-emitter voltage.
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- `use_advanced_continuation`: When false, the `C_jC` and `C_jE` non-linear capacitance curves use
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a simplified linear continuation starting when `V_BC` and `V_BE` are 0, respectively. If `true`, the `Z_C` and `Z_E` parameters
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are used to start the linear continuation at `Phi_C - Z_C` and `Phi_E - Z_E`.
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# Connectors
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- `b` Base Pin
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- `c` Collector Pin
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- `e` Emitter Pin
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- `s` Substrate Pin, only available when `use_substrate = true`
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# Parameters
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- `B_F`: Forward beta
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- `B_R`: Reverse beta
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- `Is`: Saturation current
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- `V_T`: Thermal voltage at 300K
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- `V_A`: Inverse Early voltage
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- `phi_C`: Collector junction exponent
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- `phi_E`: Emitter junction exponent
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- `Z_C`: Collector junction offset
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- `Z_E`: Emitter junction offset
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- `Tau_f`: Forward transit time
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- `Tau_r`: Reverse transit time
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- `C_jC0`: Collector junction capacitance coefficient
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- `C_jE0`: Emitter junction capacitance coefficient
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- `C_CS`: Collector-substrate capacitance
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- `gamma_C`: Collector junction exponent
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- `gamma_E`: Emitter junction exponent
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- `NF`: Forward emission coefficient
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- `NR`: Reverse emission coefficient
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"""
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@mtkmodel NPN begin
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@variables begin
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V_BE(t)
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V_BC(t)
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ICC(t)
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IEC(t)
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C_jC(t)
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C_jE(t)
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C_DC(t)
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C_DE(t)
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I_sub(t)
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V_sub(t)
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V_CS(t)
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end
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@structural_parameters begin
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use_substrate = false
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use_Early = true
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use_advanced_continuation = false
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end
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@components begin
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b = Pin()
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e = Pin()
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c = Pin()
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if use_substrate
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s = Pin()
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end
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end
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@parameters begin
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B_F = 50.0, [description = "Forward beta"]
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B_R = 0.1, [description = "Reverse beta"]
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Is = 1e-16, [description = "Saturation current"]
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V_T = 0.026, [description = "Thermal voltage at 300K"]
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if use_Early
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V_A = 0.02, [description = "Inverse Early voltage"]
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end
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phi_C = 0.8, [description = "Collector junction scaling factor"]
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phi_E = 0.6, [description = "Emitter junction scaling factor"]
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if use_advanced_continuation
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Z_C = 0.1, [description = "Collector junction offset"]
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Z_E = 0.1, [description = "Emitter junction offset"]
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end
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Tau_f = 0.12e-9, [description = "Forward transit time"]
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Tau_r = 5e-9, [description = "Reverse transit time"]
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C_jC0 = 0.5e-12, [description = "Collector-junction capacitance coefficient"]
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C_jE0 = 0.4e-12, [description = "Emitter-junction capacitance coefficient"]
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C_CS = 1e-12, [description = "Collector-substrate capacitance"]
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gamma_C = 0.5, [description = "Collector junction exponent"]
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gamma_E = 1.0 / 3.0, [description = "Emitter junction exponent"]
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NF = 1.0, [description = "Forward ideality exponent"]
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NR = 1.0, [description = "Reverse ideality exponent"]
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end
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@equations begin
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V_BE ~ b.v - e.v
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V_BC ~ b.v - c.v
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ICC ~ Is * (exp(V_BE / V_T) - 1)
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IEC ~ Is * (exp(V_BC / V_T) - 1)
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if !use_advanced_continuation
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C_jC ~ ifelse(V_BC / phi_C > 0.0, 1 + gamma_C * V_BC / phi_C,
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(C_jC0) / (1 - V_BC / phi_C)^gamma_C)
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C_jE ~ ifelse(V_BE / phi_E > 0.0, 1 + gamma_E * V_BE / phi_E,
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(C_jE0) / (1 - V_BE / phi_E)^gamma_E)
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end
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if use_advanced_continuation
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C_jC ~ if V_BC > phi_C - Z_C
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((C_jC0 * gamma_C * (1 - ((phi_C - Z_C) / phi_C))^(-gamma_C - 1)) / phi_C) *
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V_BC -
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((C_jC0 * gamma_C * (1 - ((phi_C - Z_C) / phi_C))^(-gamma_C - 1)) / phi_C) *
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(phi_C - Z_C) + (C_jC0) / (1 - (phi_C - Z_C) / phi_C)^gamma_C
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else
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(C_jC0) / (1 - V_BC / phi_C)^gamma_C
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end
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C_jE ~ if V_BE > phi_E - Z_E
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((C_jE0 * gamma_E * (1 - ((phi_E - Z_E) / phi_E))^(-gamma_E - 1)) / phi_E) *
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V_BE -
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((C_jE0 * gamma_E * (1 - ((phi_E - Z_E) / phi_E))^(-gamma_E - 1)) / phi_E) *
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(phi_E - Z_E) + (C_jE0) / (1 - (phi_E - Z_E) / phi_E)^gamma_E
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else
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(C_jE0) / (1 - V_BE / phi_E)^gamma_E
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end
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end
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C_DE ~ Tau_f * (Is / (NF * V_T)) * exp(V_BE / (NF * V_T))
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C_DC ~ Tau_r * (Is / (NR * V_T)) * exp(V_BC / (NR * V_T))
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if use_substrate
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s.i ~ I_sub
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s.v ~ V_sub
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V_CS ~ c.v - V_sub
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end
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if !use_substrate
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V_sub ~ c.v
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end
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I_sub ~ ifelse(use_substrate, -C_CS * D(V_CS), -C_CS * D(V_sub))
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c.i ~ (ICC - IEC) * ifelse(use_Early, (1 - V_BC * V_A), 1.0) - IEC / B_R -
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(C_jC + C_DC) * D(V_BC) - I_sub
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b.i ~ IEC / B_R + ICC / B_F + (C_jC + C_DC) * D(V_BC) + (C_jE + C_DE) * D(V_BE)
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e.i ~ -c.i - b.i - I_sub
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end
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end
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"""
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PNP(;name, B_F, B_R, Is, V_T, V_A, phi_C, phi_E, Z_C, Z_E, Tau_f, Tau_r, C_jC0, C_jE0, C_CS, gamma_C, gamma_E, NF, NR)
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Creates a PNP Bipolar Junction Transistor following a modified Ebers-Moll model. Includes an optional substrate pin and optional
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Early voltage effect.
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# Structural Parameters
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- `use_substrate`: If `true`, a substrate pin connector is available. If `false` it is
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assumed the substrate is connected to the collector pin.
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- `use_Early`: If `true`, the Early effect is modeled, which takes in to account the effect
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collector-base voltage variations have on the collector-base depletion region. In many cases this
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effectively means that the collector current has a dependency on the collector-emitter voltage.
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- `use_advanced_continuation`: When false, the `C_jC` and `C_jE` non-linear capacitance curves use
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a simplified linear continuation starting when `V_CB` and `V_EB` are 0, respectively. If `true`, the `Z_C` and `Z_E` parameters
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are used to start the linear continuation at `Phi_C - Z_C` and `Phi_E - Z_E`.
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# Connectors
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- `b` Base Pin
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- `c` Collector Pin
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- `e` Emitter Pin
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- `s` Substrate Pin, only available when `use_substrate = true`
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# Parameters
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- `B_F`: Forward beta
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- `B_R`: Reverse beta
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- `Is`: Saturation current
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- `V_T`: Thermal voltage at 300K
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- `V_A`: Inverse Early voltage
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- `phi_C`: Collector junction exponent
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- `phi_E`: Emitter junction exponent
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- `Z_C`: Collector junction offset
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- `Z_E`: Emitter junction offset
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- `Tau_f`: Forward transit time
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- `Tau_r`: Reverse transit time
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- `C_jC0`: Collector junction capacitance coefficient
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- `C_jE0`: Emitter junction capacitance coefficient
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- `C_CS`: Collector-substrate capacitance
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- `gamma_C`: Collector junction exponent
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- `gamma_E`: Emitter junction exponent
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- `NF`: Forward emission coefficient
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- `NR`: Reverse emission coefficient
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"""
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@mtkmodel PNP begin
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@variables begin
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V_EB(t)
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V_CB(t)
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ICC(t)
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IEC(t)
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C_jC(t)
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C_jE(t)
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C_DC(t)
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C_DE(t)
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I_sub(t)
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V_sub(t)
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V_CS(t)
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end
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@structural_parameters begin
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use_substrate = false
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use_Early = true
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use_advanced_continuation = false
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end
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@components begin
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b = Pin()
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e = Pin()
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c = Pin()
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if use_substrate
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s = Pin()
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end
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end
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@parameters begin
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B_F = 50.0, [description = "Forward beta"]
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B_R = 0.1, [description = "Reverse beta"]
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Is = 1e-16, [description = "Saturation current"]
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V_T = 0.026, [description = "Thermal voltage at 300K"]
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if use_Early
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V_A = 0.02, [description = "Inverse Early voltage"]
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end
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phi_C = 0.8, [description = "Collector junction scaling factor"]
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phi_E = 0.6, [description = "Emitter junction scaling factor"]
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if use_advanced_continuation
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Z_C = 0.1, [description = "Collector junction offset"]
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Z_E = 0.1, [description = "Emitter junction offset"]
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end
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Tau_f = 0.12e-9, [description = "Forward transit time"]
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Tau_r = 5e-9, [description = "Reverse transit time"]
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C_jC0 = 0.5e-12, [description = "Collector-junction capacitance coefficient"]
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C_jE0 = 0.4e-12, [description = "Emitter-junction capacitance coefficient"]
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C_CS = 1e-12, [description = "Collector-substrate capacitance"]
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gamma_C = 0.5, [description = "Collector junction exponent"]
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gamma_E = 1.0 / 3.0, [description = "Emitter junction exponent"]
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NF = 1.0, [description = "Forward ideality exponent"]
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NR = 1.0, [description = "Reverse ideality exponent"]
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end
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@equations begin
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V_EB ~ e.v - b.v
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V_CB ~ c.v - b.v
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ICC ~ Is * (exp(V_EB / V_T) - 1)
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IEC ~ Is * (exp(V_CB / V_T) - 1)
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if !use_advanced_continuation
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C_jC ~ ifelse(V_CB / phi_C > 0.0, 1 + gamma_C * V_CB / phi_C,
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(C_jC0) / (1 - V_CB / phi_C)^gamma_C)
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C_jE ~ ifelse(V_EB / phi_E > 0.0, 1 + gamma_E * V_EB / phi_E,
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(C_jE0) / (1 - V_EB / phi_E)^gamma_E)
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end
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if use_advanced_continuation
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C_jC ~ if V_CB > phi_C - Z_C
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((C_jC0 * gamma_C * (1 - ((phi_C - Z_C) / phi_C))^(-gamma_C - 1)) / phi_C) *
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V_CB -
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((C_jC0 * gamma_C * (1 - ((phi_C - Z_C) / phi_C))^(-gamma_C - 1)) / phi_C) *
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(phi_C - Z_C) + (C_jC0) / (1 - (phi_C - Z_C) / phi_C)^gamma_C
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else
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(C_jC0) / (1 - V_CB / phi_C)^gamma_C
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end
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C_jE ~ if V_EB > phi_E - Z_E
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((C_jE0 * gamma_E * (1 - ((phi_E - Z_E) / phi_E))^(-gamma_E - 1)) / phi_E) *
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V_BE -
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((C_jE0 * gamma_E * (1 - ((phi_E - Z_E) / phi_E))^(-gamma_E - 1)) / phi_E) *
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(phi_E - Z_E) + (C_jE0) / (1 - (phi_E - Z_E) / phi_E)^gamma_E
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else
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(C_jE0) / (1 - V_BE / phi_E)^gamma_E
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end
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end
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C_DE ~ Tau_f * (Is / (NF * V_T)) * exp(V_EB / (NF * V_T))
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C_DC ~ Tau_r * (Is / (NR * V_T)) * exp(V_CB / (NR * V_T))
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if use_substrate
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s.i ~ I_sub
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s.v ~ V_sub
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V_CS ~ c.v - V_sub
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end
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if !use_substrate
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V_sub ~ c.v
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end
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I_sub ~ ifelse(use_substrate, -C_CS * D(V_CS), -C_CS * D(V_sub))
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c.i ~ IEC / B_R - (ICC - IEC) * ifelse(use_Early, (1 - V_CB * V_A), 1.0) +
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(C_jC + C_DC) * D(V_CB) - I_sub
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b.i ~ -IEC / B_R - ICC / B_F - (C_jC + C_DC) * D(V_CB) - (C_jE + C_DE) * D(V_EB)
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e.i ~ -c.i - b.i - I_sub
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end
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end

‎src/Electrical/Electrical.jl‎

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export Voltage, Current
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include("Analog/sources.jl")
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export NPN, PNP
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include("Analog/transistors.jl")
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# include("Digital/gates.jl")
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# include("Digital/sources.jl")
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