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add MOSFETs
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‎src/Electrical/Analog/mosfets.jl‎

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"""
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NMOS(;name, V_tn, R_DS, lambda)
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Creates an N-type MOSFET transistor
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# Structural Parameters
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- `use_transconductance`: If `true` the parameter `k_n` needs to be provided, and is used in the calculation of the current
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through the transistor. Otherwise, `mu_n`, `C_ox`, `W`, and `L` need to be provided and are used to calculate the transconductance.
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- `use_channel_length_modulation`: If `true` the channel length modulation effect is taken in to account. In essence this gives
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the drain-source current has a small dependency on the drains-source voltage in the saturation region of operation.
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# Connectors
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- `d` Drain Pin
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- `g` Gate Pin
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- `s` Source Pin
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# Parameters
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- `mu_n`: Electron mobility
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- `C_ox`: Oxide capacitance (F/m^2)
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- `W`: Channel width (m)
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- `L`: Channel length
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- `k_n`: MOSFET transconductance parameter
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Based on the MOSFET models in (Sedra, A. S., Smith, K. C., Carusone, T. C., & Gaudet, V. C. (2021). Microelectronic circuits (8th ed.). Oxford University Press.)
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"""
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@mtkmodel NMOS begin
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@variables begin
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V_GS(t)
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V_DS(t)
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V_OV(t)
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end
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@components begin
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d = Pin(), [description = "Drain pin"]
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g = Pin(), [description = "Gate pin"]
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s = Pin(), [description = "Source pin"]
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end
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@parameters begin
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V_tn = 0.8, [description = "Threshold voltage (V)"]
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R_DS = 1e7, [description = "Drain to source resistance (Ω)"]
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if use_channel_length_modulation
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lambda = 1 / 25, [description = "Channel length modulation coefficient (V^(-1))"]
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end
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if !use_transconductance
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mu_n, [description = "Electron mobility"]
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C_ox, [description = "Oxide capacitance (F/m^2)"]
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W, [description = "Channel width (m)"]
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L, [description = "Channel length (m)"]
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else
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k_n = 20e-3, [description = "MOSFET transconductance parameter"]
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end
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end
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@structural_parameters begin
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use_transconductance = true
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use_channel_length_modulation = true
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end
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begin
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if !use_transconductance
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k_n = mu_n * C_ox * (W / L)
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end
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end
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@equations begin
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V_DS ~ ifelse(d.v < s.v, s.v - d.v, d.v - s.v)
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V_GS ~ g.v - ifelse(d.v < s.v, d.v, s.v)
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V_OV ~ V_GS - V_tn
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d.i ~ ifelse(d.v < s.v, -1, 1) * ifelse(V_GS < V_tn,
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0 + V_DS / R_DS,
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ifelse(V_DS < V_OV,
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ifelse(use_channel_length_modulation,
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k_n * (1 + lambda * V_DS) * (V_OV - V_DS / 2) * V_DS + V_DS / R_DS,
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k_n * (V_OV - V_DS / 2) * V_DS + V_DS / R_DS),
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ifelse(use_channel_length_modulation,
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((k_n * V_OV^2) / 2) * (1 + lambda * V_DS) + V_DS / R_DS,
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(k_n * V_OV^2) / 2 + V_DS / R_DS)
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)
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)
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g.i ~ 0
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s.i ~ -d.i
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end
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end
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"""
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PMOS(;name, V_tp, R_DS, lambda)
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Creates an N-type MOSFET transistor
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# Structural Parameters
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- `use_transconductance`: If `true` the parameter `k_p` needs to be provided, and is used in the calculation of the current
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through the transistor. Otherwise, `mu_n`, `C_ox`, `W`, and `L` need to be provided and are used to calculate the transconductance.
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- `use_channel_length_modulation`: If `true` the channel length modulation effect is taken in to account. In essence this gives
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the drain-source current has a small dependency on the drains-source voltage in the saturation region of operation.
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# Connectors
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- `d` Drain Pin
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- `g` Gate Pin
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- `s` Source Pin
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# Parameters
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- `mu_p`: Electron mobility
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- `C_ox`: Oxide capacitance (F/m^2)
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- `W`: Channel width (m)
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- `L`: Channel length
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- `k_p`: MOSFET transconductance parameter
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Based on the MOSFET models in (Sedra, A. S., Smith, K. C., Carusone, T. C., & Gaudet, V. C. (2021). Microelectronic circuits (8th ed.). Oxford University Press.)
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"""
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@mtkmodel PMOS begin
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@variables begin
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V_GS(t)
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V_DS(t)
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end
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@components begin
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d = Pin(), [description = "Drain pin"]
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g = Pin(), [description = "Gate pin"]
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s = Pin(), [description = "Source pin"]
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end
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@parameters begin
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V_tp = -1.5, [description = "Threshold voltage (V)"]
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R_DS = 1e7, [description = "Drain-source resistance (Ω)"]
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if use_channel_length_modulation
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lambda = 1 / 25, [description = "Channel length modulation coefficient (V^(-1))"]
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end
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if !use_transconductance
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mu_p, [description = "Hole mobility"]
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C_ox, [description = "Oxide capacitance (F/m^2)"]
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W, [description = "Channel width (m)"]
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L, [description = "Channel length (m)"]
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else
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k_p = 20e-3
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end
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end
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@structural_parameters begin
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use_transconductance = true
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use_channel_length_modulation = true
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end
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begin
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if !use_transconductance
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k_p = mu_p * C_ox * (W / L)
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end
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end
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@equations begin
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V_DS ~ ifelse(d.v > s.v, s.v - d.v, d.v - s.v)
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V_GS ~ g.v - ifelse(d.v > s.v, d.v, s.v)
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d.i ~ -ifelse(d.v > s.v, -1.0, 1.0) * ifelse(V_GS > V_tp,
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0.0 + V_DS / R_DS,
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ifelse(V_DS > (V_GS - V_tp),
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ifelse(use_channel_length_modulation,
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k_p * (1 + lambda * V_DS) * ((V_GS - V_tp) - V_DS / 2) * V_DS +
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V_DS / R_DS,
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k_p * ((V_GS - V_tp) - V_DS / 2) * V_DS + V_DS / R_DS),
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ifelse(use_channel_length_modulation,
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((k_p * (V_GS - V_tp)^2) / 2) * (1 + lambda * V_DS) + V_DS / R_DS,
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(k_p * (V_GS - V_tp)^2) / 2 + V_DS / R_DS)
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)
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)
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g.i ~ 0
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s.i ~ -d.i
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end
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end

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