add docstrings and PNP

Author: jClugstor

src/Electrical/Analog/transistors.jl

@@ -1,7 +1,46 @@
 """
-    NPN(;name, B_F, B_R, Is, V_T, V_A, Phi_C, Phi_E, Z_C, Z_E, Tau_f, Tau_r, C_jC0, C_jE0, C_CS, gamma_C, gamma_E, NF, NR)
+    NPN(;name, B_F, B_R, Is, V_T, V_A, phi_C, phi_E, Z_C, Z_E, Tau_f, Tau_r, C_jC0, C_jE0, C_CS, gamma_C, gamma_E, NF, NR)
 
-Creates an NPN Bipolar Junction Transistor following a modified Ebers-Moll model. 
+Creates an NPN Bipolar Junction Transistor following a modified Ebers-Moll model. Includes an optional substrate pin and optional
+Early voltage effect. 
+
+    # Structural Parameters
+        - `use_substrate`: If `true`, a substrate pin connector is available. If `false` it is 
+        assumed the substrate is connected to the collector pin.
+
+        - `use_Early`: If `true`, the Early effect is modeled, which takes in to account the effect 
+        collector-base voltage variations have on the collector-base depletion region. In many cases this
+        effectively means that the collector current has a dependency on the collector-emitter voltage.
+
+        - `use_advanced_continuation`: When false, the `C_jC` and `C_jE` non-linear capacitance curves use 
+        a simplified linear continuation starting when `V_BC` and `V_BE` are 0, respectively. If `true`, the `Z_C` and `Z_E` parameters 
+        are used to start the linear continuation at `Phi_C - Z_C` and `Phi_E - Z_E`. 
+
+    # Connectors
+        - `b` Base Pin
+        - `c` Collector Pin
+        - `e` Emitter Pin
+        - `s` Substrate Pin, only available when `use_substrate = true`
+
+    # Parameters
+        - `B_F`: Forward beta
+        - `B_R`: Reverse beta
+        - `Is`: Saturation current
+        - `V_T`: Thermal voltage at 300K
+        - `V_A`: Inverse Early voltage
+        - `phi_C`: Collector junction exponent
+        - `phi_E`: Emitter junction exponent
+        - `Z_C`: Collector junction offset
+        - `Z_E`: Emitter junction offset 
+        - `Tau_f`: Forward transit time
+        - `Tau_r`: Reverse transit time
+        - `C_jC0`: Collector junction capacitance coefficient
+        - `C_jE0`: Emitter junction capacitance coefficient
+        - `C_CS`: Collector-substrate capacitance
+        - `gamma_C`: Collector junction exponent
+        - `gamma_E`: Emitter junction exponent
+        - `NF`: Forward emission coefficient
+        - `NR`: Reverse emission coefficient
 """
 
 
@@ -30,46 +69,46 @@ Creates an NPN Bipolar Junction Transistor following a modified Ebers-Moll model
     end
 
     @components begin
-        b = Pin()
-        e = Pin()
-        c = Pin()
+        b = Pin(), [description = "Base pin"]
+        e = Pin(), [description = "Emitter pin"]
+        c = Pin(), [description = "Collector pin"]
 
         if use_substrate
-            s = Pin()
+            s = Pin(), [description = "Substrate pin"]
         end
     end
 
     @parameters begin
-        B_F = 50.0
-        B_R = 0.1
-        Is = 1e-16
-        V_T = 0.02
+        B_F = 50.0, [description = "Forward beta"]
+        B_R = 0.1, [description = "Reverse beta"]
+        Is = 1e-16, [description = "Saturation current"]
+        V_T = 0.026, [description = "Thermal voltage at 300K"]
 
         if use_Early
-            V_A = 0.02
+            V_A = 0.02, [description = "Inverse Early voltage"]
         end
 
-        Phi_C = 0.8
-        Phi_E = 0.6
+        phi_C = 0.8, [description = "Collector junction scaling factor"]
+        phi_E = 0.6, [description = "Emitter junction scaling factor"]
 
         if use_advanced_continuation
-            Z_C = 0.1
-            Z_E = 0.1
+            Z_C = 0.1, [description = "Collector junction offset"]
+            Z_E = 0.1, [description = "Emitter junction offset"]
         end
 
-        Tau_f = 0.12e-9
-        Tau_r = 5e-9
+        Tau_f = 0.12e-9, [description = "Forward transit time"]
+        Tau_r = 5e-9, [description = "Reverse transit time"]
 
-        C_jC0 = 0.5e-12
-        C_jE0 = 0.4e-12
+        C_jC0 = 0.5e-12, [description = "Collector-junction capacitance coefficient"]
+        C_jE0 = 0.4e-12, [description = "Emitter-junction capacitance coefficient"]
 
-        C_CS = 1e-12
+        C_CS = 1e-12, [description = "Collector-substrate capacitance"]
 
-        gamma_C = 0.5
-        gamma_E = 1.0 / 3.0
+        gamma_C = 0.5, [description = "Collector junction exponent"]
+        gamma_E = 1.0 / 3.0, [description = "Emitter junction exponent"]
 
-        NF = 1.0
-        NR = 1.0
+        NF = 1.0, [description = "Forward ideality exponent"]
+        NR = 1.0, [description = "Reverse ideality exponent"]
     end
 
     @equations begin
@@ -80,29 +119,29 @@ Creates an NPN Bipolar Junction Transistor following a modified Ebers-Moll model
         IEC ~ Is * (exp(V_BC / V_T) - 1)
 
         if !use_advanced_continuation
-            C_jC ~ ifelse(V_BC / Phi_C > 0.0, 1 + gamma_C * V_BC / Phi_C,
-                (C_jC0) / (1 - V_BC / Phi_C)^gamma_C)
-            C_jE ~ ifelse(V_BE / Phi_E > 0.0, 1 + gamma_E * V_BE / Phi_E,
-                (C_jE0) / (1 - V_BE / Phi_E)^gamma_E)
+            C_jC ~ ifelse(V_BC / phi_C > 0.0, 1 + gamma_C * V_BC / phi_C,
+                (C_jC0) / (1 - V_BC / phi_C)^gamma_C)
+            C_jE ~ ifelse(V_BE / phi_E > 0.0, 1 + gamma_E * V_BE / phi_E,
+                (C_jE0) / (1 - V_BE / phi_E)^gamma_E)
         end
 
         if use_advanced_continuation
-            C_jC ~ if V_BC > Phi_C - Z_C
-                ((C_jC0 * gamma_C * (1 - ((Phi_C - Z_C) / Phi_C))^(-gamma_C - 1)) / Phi_C) *
+            C_jC ~ if V_BC > phi_C - Z_C
+                ((C_jC0 * gamma_C * (1 - ((phi_C - Z_C) / phi_C))^(-gamma_C - 1)) / phi_C) *
                 V_BC -
-                ((C_jC0 * gamma_C * (1 - ((Phi_C - Z_C) / Phi_C))^(-gamma_C - 1)) / Phi_C) *
-                (Phi_C - Z_C) + (C_jC0) / (1 - (Phi_C - Z_C) / Phi_C)^gamma_C
+                ((C_jC0 * gamma_C * (1 - ((phi_C - Z_C) / phi_C))^(-gamma_C - 1)) / phi_C) *
+                (phi_C - Z_C) + (C_jC0) / (1 - (phi_C - Z_C) / phi_C)^gamma_C
             else
-                (C_jC0) / (1 - V_BC / Phi_C)^gamma_C
+                (C_jC0) / (1 - V_BC / phi_C)^gamma_C
             end
 
-            C_jE ~ if V_BE > Phi_E - Z_E
-                ((C_jE0 * gamma_E * (1 - ((Phi_E - Z_E) / Phi_E))^(-gamma_E - 1)) / Phi_E) *
+            C_jE ~ if V_BE > phi_E - Z_E
+                ((C_jE0 * gamma_E * (1 - ((phi_E - Z_E) / phi_E))^(-gamma_E - 1)) / phi_E) *
                 V_BE -
-                ((C_jE0 * gamma_E * (1 - ((Phi_E - Z_E) / Phi_E))^(-gamma_E - 1)) / Phi_E) *
-                (Phi_E - Z_E) + (C_jE0) / (1 - (Phi_E - Z_E) / Phi_E)^gamma_E
+                ((C_jE0 * gamma_E * (1 - ((phi_E - Z_E) / phi_E))^(-gamma_E - 1)) / phi_E) *
+                (phi_E - Z_E) + (C_jE0) / (1 - (phi_E - Z_E) / phi_E)^gamma_E
             else
-                (C_jE0) / (1 - V_BE / Phi_E)^gamma_E
+                (C_jE0) / (1 - V_BE / phi_E)^gamma_E
             end
         end
 
@@ -121,9 +160,177 @@ Creates an NPN Bipolar Junction Transistor following a modified Ebers-Moll model
 
         I_sub ~ ifelse(use_substrate, -C_CS * D(V_CS), -C_CS * D(V_sub))
 
-        C.i ~ (ICC - IEC) * ifelse(use_Early, (1 - V_BC * V_A), 1.0) - IEC / B_R -
+        c.i ~ (ICC - IEC) * ifelse(use_Early, (1 - V_BC * V_A), 1.0) - IEC / B_R -
               (C_jC + C_DC) * D(V_BC) - I_sub
-        B.i ~ IEC / B_R + ICC / B_F + (C_jC + C_DC) * D(V_BC) + (C_jE + C_DE) * D(V_BE)
-        E.i ~ -C.i - B.i - I_sub
+        b.i ~ IEC / B_R + ICC / B_F + (C_jC + C_DC) * D(V_BC) + (C_jE + C_DE) * D(V_BE)
+        e.i ~ -c.i - b.i - I_sub
+    end
+end
+
+
+"""
+    PNP(;name, B_F, B_R, Is, V_T, V_A, phi_C, phi_E, Z_C, Z_E, Tau_f, Tau_r, C_jC0, C_jE0, C_CS, gamma_C, gamma_E, NF, NR)
+
+Creates a PNP Bipolar Junction Transistor following a modified Ebers-Moll model. Includes an optional substrate pin and optional
+Early voltage effect. 
+
+    # Structural Parameters
+        - `use_substrate`: If `true`, a substrate pin connector is available. If `false` it is 
+        assumed the substrate is connected to the collector pin.
+
+        - `use_Early`: If `true`, the Early effect is modeled, which takes in to account the effect 
+        collector-base voltage variations have on the collector-base depletion region. In many cases this
+        effectively means that the collector current has a dependency on the collector-emitter voltage.
+
+        - `use_advanced_continuation`: When false, the `C_jC` and `C_jE` non-linear capacitance curves use 
+        a simplified linear continuation starting when `V_CB` and `V_EB` are 0, respectively. If `true`, the `Z_C` and `Z_E` parameters 
+        are used to start the linear continuation at `Phi_C - Z_C` and `Phi_E - Z_E`. 
+
+    # Connectors
+        - `b` Base Pin
+        - `c` Collector Pin
+        - `e` Emitter Pin
+        - `s` Substrate Pin, only available when `use_substrate = true`
+
+    # Parameters
+        - `B_F`: Forward beta
+        - `B_R`: Reverse beta
+        - `Is`: Saturation current
+        - `V_T`: Thermal voltage at 300K
+        - `V_A`: Inverse Early voltage
+        - `phi_C`: Collector junction exponent
+        - `phi_E`: Emitter junction exponent
+        - `Z_C`: Collector junction offset
+        - `Z_E`: Emitter junction offset 
+        - `Tau_f`: Forward transit time
+        - `Tau_r`: Reverse transit time
+        - `C_jC0`: Collector junction capacitance coefficient
+        - `C_jE0`: Emitter junction capacitance coefficient
+        - `C_CS`: Collector-substrate capacitance
+        - `gamma_C`: Collector junction exponent
+        - `gamma_E`: Emitter junction exponent
+        - `NF`: Forward emission coefficient
+        - `NR`: Reverse emission coefficient
+"""
+
+@mtkmodel PNP begin
+    @variables begin
+        V_EB(t)
+        V_CB(t)
+        ICC(t)
+        IEC(t)
+
+        C_jC(t)
+        C_jE(t)
+        C_DC(t)
+        C_DE(t)
+
+        I_sub(t)
+        V_sub(t)
+        V_CS(t)
+    end
+
+    @structural_parameters begin
+        use_substrate = false
+        use_Early = true
+        use_advanced_continuation = false
+    end
+
+    @components begin
+        b = Pin()
+        e = Pin()
+        c = Pin()
+
+        if use_substrate
+            s = Pin()
+        end
+    end
+
+    @parameters begin
+        B_F = 50.0, [description = "Forward beta"]
+        B_R = 0.1, [description = "Reverse beta"]
+        Is = 1e-16, [description = "Saturation current"]
+        V_T = 0.026, [description = "Thermal voltage at 300K"]
+
+        if use_Early
+            V_A = 0.02, [description = "Inverse Early voltage"]
+        end
+
+        phi_C = 0.8, [description = "Collector junction scaling factor"]
+        phi_E = 0.6, [description = "Emitter junction scaling factor"]
+
+        if use_advanced_continuation
+            Z_C = 0.1, [description = "Collector junction offset"]
+            Z_E = 0.1, [description = "Emitter junction offset"]
+        end
+
+        Tau_f = 0.12e-9, [description = "Forward transit time"]
+        Tau_r = 5e-9, [description = "Reverse transit time"]
+
+        C_jC0 = 0.5e-12, [description = "Collector-junction capacitance coefficient"]
+        C_jE0 = 0.4e-12, [description = "Emitter-junction capacitance coefficient"]
+
+        C_CS = 1e-12, [description = "Collector-substrate capacitance"]
+
+        gamma_C = 0.5, [description = "Collector junction exponent"]
+        gamma_E = 1.0 / 3.0, [description = "Emitter junction exponent"]
+
+        NF = 1.0, [description = "Forward ideality exponent"]
+        NR = 1.0, [description = "Reverse ideality exponent"]
+    end
+
+    @equations begin
+        V_EB ~ e.v - b.v
+        V_CB ~ c.v - b.v
+
+        ICC ~ Is * (exp(V_EB / V_T) - 1)
+        IEC ~ Is * (exp(V_CB / V_T) - 1)
+
+        if !use_advanced_continuation
+            C_jC ~ ifelse(V_CB / phi_C > 0.0, 1 + gamma_C * V_CB / phi_C,
+                (C_jC0) / (1 - V_CB / phi_C)^gamma_C)
+            C_jE ~ ifelse(V_EB / phi_E > 0.0, 1 + gamma_E * V_EB / phi_E,
+                (C_jE0) / (1 - V_EB / phi_E)^gamma_E)
+        end
+
+        if use_advanced_continuation
+            C_jC ~ if V_CB > phi_C - Z_C
+                ((C_jC0 * gamma_C * (1 - ((phi_C - Z_C) / phi_C))^(-gamma_C - 1)) / phi_C) *
+                V_CB -
+                ((C_jC0 * gamma_C * (1 - ((phi_C - Z_C) / phi_C))^(-gamma_C - 1)) / phi_C) *
+                (phi_C - Z_C) + (C_jC0) / (1 - (phi_C - Z_C) / phi_C)^gamma_C
+            else
+                (C_jC0) / (1 - V_CB / phi_C)^gamma_C
+            end
+
+            C_jE ~ if V_EB > phi_E - Z_E
+                ((C_jE0 * gamma_E * (1 - ((phi_E - Z_E) / phi_E))^(-gamma_E - 1)) / phi_E) *
+                V_BE -
+                ((C_jE0 * gamma_E * (1 - ((phi_E - Z_E) / phi_E))^(-gamma_E - 1)) / phi_E) *
+                (phi_E - Z_E) + (C_jE0) / (1 - (phi_E - Z_E) / phi_E)^gamma_E
+            else
+                (C_jE0) / (1 - V_BE / phi_E)^gamma_E
+            end
+        end
+
+        C_DE ~ Tau_f * (Is / (NF * V_T)) * exp(V_EB / (NF * V_T))
+        C_DC ~ Tau_r * (Is / (NR * V_T)) * exp(V_CB / (NR * V_T))
+
+        if use_substrate
+            s.i ~ I_sub
+            s.v ~ V_sub
+            V_CS ~ c.v - V_sub
+        end
+
+        if !use_substrate
+            V_sub ~ c.v
+        end
+
+        I_sub ~ ifelse(use_substrate, -C_CS * D(V_CS), -C_CS * D(V_sub))
+
+        c.i ~ IEC / B_R - (ICC - IEC) * ifelse(use_Early, (1 - V_CB * V_A), 1.0) +
+              (C_jC + C_DC) * D(V_CB) - I_sub
+        b.i ~ -IEC / B_R - ICC / B_F - (C_jC + C_DC) * D(V_CB) - (C_jE + C_DE) * D(V_EB)
+        e.i ~ -c.i - b.i - I_sub
     end
 end