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Merge branch 'docs/external_ram_vddspi' into 'master'
docs: Update external RAM voltage control for ESP32-S2/S3 Closes DOC-11795 See merge request espressif/esp-idf!41666
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docs/en/api-guides/external-ram.rst

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.. only:: esp32 or esp32s2 or esp32s3
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Some PSRAM chips are 1.8 V devices and some are 3.3 V. The working voltage of the PSRAM chip must match the working voltage of the flash component. Consult the datasheet for your PSRAM chip and {IDF_TARGET_NAME} device to find out the working voltages. For a 1.8 V PSRAM chip, make sure to either set the MTDI pin to a high signal level on boot-up, or program {IDF_TARGET_NAME} eFuses to always use the VDD_SIO level of 1.8 V. Not doing this can damage the PSRAM and/or flash chip.
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.. only:: esp32s2 or esp32s3
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Some PSRAM chips are 1.8 V devices and some are 3.3 V. The working voltage of the PSRAM chip must match the working voltage of the flash component. Consult the datasheet for your PSRAM chip and {IDF_TARGET_NAME} device to find out the working voltages. For a 1.8 V PSRAM chip, make sure to either set the GPIO45 strapping pin to a high signal level on boot-up, or program {IDF_TARGET_NAME} eFuses to always use the VDD_SPI level of 1.8 V. Not doing this can damage the PSRAM and/or flash chip.
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Some PSRAM chips are 1.8 V devices and some are 3.3 V. Consult the datasheet for your PSRAM chip and {IDF_TARGET_NAME} device to find out the working voltages.

docs/zh_CN/api-guides/external-ram.rst

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PSRAM 芯片的工作电压分为 1.8 V 和 3.3 V。其工作电压必须与 flash 的工作电压匹配。请查询相应 PSRAM 芯片以及 {IDF_TARGET_NAME} 的技术规格书获取准确的工作电压。对于 1.8 V 的 PSRAM 芯片,请确保在启动时将 MTDI 管脚设置为高电平,或者将 {IDF_TARGET_NAME} 中的 eFuses 设置为始终使用 1.8 V 的 VDD_SIO 电平,否则有可能会损坏 PSRAM 和/或 flash 芯片。
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.. only:: esp32s2 or esp32s3
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PSRAM 芯片的工作电压分为 1.8 V 和 3.3 V。其工作电压必须与 flash 的工作电压匹配。请查询相应 PSRAM 芯片以及 {IDF_TARGET_NAME} 的技术规格书获取准确的工作电压。对于 1.8 V 的 PSRAM 芯片,请确保在启动时将 GPIO45 管脚设置为高电平,或者将 {IDF_TARGET_NAME} 中的 eFuses 设置为始终使用 1.8 V 的 VDD_SPI 电平,否则有可能会损坏 PSRAM 和/或 flash 芯片。
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请查询相应 PSRAM 芯片以及 {IDF_TARGET_NAME} 的技术规格书获取准确的工作电压。

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