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lammps-tutorials.tex

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@@ -2799,7 +2799,7 @@ \subsubsection{Prepare and relax}
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variable qO equal charge(grpO)/count(grpO)
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variable vq atom q
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\end{lstlisting}
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Let us print the averaged charges \lmpcmd{qSi} and \lmpcmd{qO} using the
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To print the averaged charges \lmpcmd{qSi} and \lmpcmd{qO} using the
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\lmpcmd{thermo\_style} command, and create images of the system. Add the
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following lines to \flecmd{relax.lmp}:
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\begin{lstlisting}
@@ -2810,10 +2810,10 @@ \subsubsection{Prepare and relax}
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dump_modify viz adiam Si 2.6 adiam O 2.3 backcolor white &
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amap -1 2 ca 0.0 2 min royalblue max orangered
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\end{lstlisting}
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Here, the atoms are colored by their charges \lmpcmd{q}, from royal blue
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Here, the atoms are colored by their charges \lmpcmd{q}, ranging from royal blue
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(when $q=-1\,\text{e}$) to orange-red (when $q=2\,\text{e}$).
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We can generate histograms of the charges for each atom types using
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You can generate histograms of the charges for each atom type using
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\lmpcmd{fix ave/histo} commands:
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\begin{lstlisting}
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fix myhis1 grpSi ave/histo 10 500 5000 -1.5 2.5 1000 &
@@ -2822,8 +2822,8 @@ \subsubsection{Prepare and relax}
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v_vq file relax-O.histo mode vector
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\end{lstlisting}
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We can also use the \lmpcmd{fix reaxff/species} to evaluate what species are
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present within the simulation. It will be useful later when the system is deformed
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and some bonds are broken:
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present within the simulation. It will be useful later when the system is deformed,
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and bonds are broken:
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\begin{lstlisting}
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fix myspec all reaxff/species 5 1 5 relax.species element Si O
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\end{lstlisting}
@@ -2841,15 +2841,17 @@ \subsubsection{Prepare and relax}
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\end{lstlisting}
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Run the \flecmd{relax.lmp} file using LAMMPS. As seen from \flecmd{relax.species},
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only one species is detected, called \lmpcmd{O384Si192}, representing the entire system.
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The value of the charge of the atoms can be extracted from the \flecmd{relax.lammpstrj}
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file using Python.
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As the simulation progresses, the charge of every atom fluctuates
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because it is adjusting to the local environment of the atom (Fig.\,\ref{fig:SIO-charge}).
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It can also be seen that the averaged charges for both silicon and oxygen
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atoms vary abruptly at the beginning of the simulation, which correlates with
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a rapid volume change of the box during which the inter-atomic distances are
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expected to quickly change (Fig.\,\ref{fig:SIO-volume}).
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It is also observed that the averaged charges for silicon and oxygen
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atoms fluctuate significantly at the beginning of the simulation, corresponding
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to a rapid change in the system volume, which causes interatomic distances to
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shift quickly (Fig.\,\ref{fig:SIO-volume}). The atoms with the
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most extreme charges are located at structural defects,
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such as dangling oxygen groups (Fig.\,\ref{fig:SIO-slice}).
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Finally, the charge distribution $P(q)$ can be plotted using the charge values
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from the \flecmd{.histo} files (Fig.\,\ref{fig:SIO-distribution}).
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\begin{figure}
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\centering
@@ -2867,13 +2869,6 @@ \subsubsection{Prepare and relax}
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\label{fig:SIO-volume}
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\end{figure}
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We can also plot the charge distribution $P(q)$ using the charge values
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printed in the \flecmd{dump.lammptrj} file (Fig.\,\ref{fig:SIO-distribution}).
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The \flecmd{dump.lammptrj} file can be opened using VMD. By coloring the atoms
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by their charges, one can see that the atoms with the extreme-most charges are
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located at defects in the amorphous structure (here at the positions of the
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dangling oxygen groups) (Fig.\,\ref{fig:SIO-slice}).
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\begin{figure}
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\includegraphics[width=\linewidth]{SIO-distribution}
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\caption{Probability distribution of charge of silicon (positive, blue) and oxygen

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