@@ -57,10 +57,12 @@ struct flash_pages_layout {
57
57
* through a runtime.
58
58
*/
59
59
struct flash_parameters {
60
+ /** Minimal write alignment and size */
60
61
const size_t write_block_size ;
61
- /* Device capabilities. Only drivers are supposed to set the
62
- * capabilities directly, users need to call the FLASH_CAPS_
63
- * macros on pointer to flash_parameters to get capabilities.
62
+
63
+ /** @cond INTERNAL_HIDDEN */
64
+ /* User code should call flash_params_get_ functions on flash_parameters
65
+ * to get capabilities, rather than accessing object contents directly.
64
66
*/
65
67
struct {
66
68
/* Device has no explicit erase, so it either erases on
@@ -70,7 +72,9 @@ struct flash_parameters {
70
72
*/
71
73
bool no_explicit_erase : 1 ;
72
74
} caps ;
73
- uint8_t erase_value ; /* Byte value of erased flash */
75
+ /** @endcond */
76
+ /** Value the device is filled in erased areas */
77
+ uint8_t erase_value ;
74
78
};
75
79
76
80
/** Set for ordinary Flash where erase is needed before write of random data */
@@ -324,7 +328,7 @@ __syscall int flash_fill(const struct device *dev, uint8_t val, off_t offset, si
324
328
* If device is explicit erase type device or device driver provides erase
325
329
* callback, the callback of the device is called, in which it behaves
326
330
* the same way as flash_erase.
327
- * If a device is does not require explicit erase, either because
331
+ * If a device does not require explicit erase, either because
328
332
* it has no erase at all or has auto-erase/erase-on-write,
329
333
* and does not provide erase callback then erase is emulated by
330
334
* leveling selected device memory area with erase_value assigned to
0 commit comments